GAN3R2-100CBE Datasheet, Equivalent, GaN FET.


Part GAN3R2-100CBE
Description GaN FET
Feature WLCSP8 GAN3R2-100CBE 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) 27 April 2023 Product data sheet 1. General description The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • ESD .
Manufacture nexperia
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GAN3R2-100CBE   GAN3R2-100CBE

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GAN3R2-100CBE Datasheet



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