| Feature |
WLCSP8
GAN3R2-100CBE
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a
3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)
27 April 2023
Product data sheet
1. General description
The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance.
2. Features and benefits
• Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • ESD . |
