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MSC010SDA070S Datasheet, Equivalent, Schottky Diode.Zero Recovery Silicon Carbide Schottky Diode Zero Recovery Silicon Carbide Schottky Diode |
| Part | MSC010SDA070S |
|---|---|
| Description | Zero Recovery Silicon Carbide Schottky Diode |
| Feature | MSC010SDA070S Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA070S device is a 700 V, 10 A SiC SBD in a TO-268 (D3PAK) package. Features The following are key features of the MSC010SDA070S device: • No reverse recovery • Low forward voltage • Low leakage current • Avalanche-energy rated • RoHS compliant Benefits The following are benefits of the MSC010. |
| Manufacture | Microchip |
| Datasheet |
| Part | MSC010SDA070S |
|---|---|
| Description | Zero Recovery Silicon Carbide Schottky Diode |
| Feature | MSC010SDA070S Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA070S device is a 700 V, 10 A SiC SBD in a TO-268 (D3PAK) package. Features The following are key features of the MSC010SDA070S device: • No reverse recovery • Low forward voltage • Low leakage current • Avalanche-energy rated • RoHS compliant Benefits The following are benefits of the MSC010. |
| Manufacture | Microchip |
| Datasheet |
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