UT2312H | UTC
N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT2312H
5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION The UT2312H uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES * RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced.
- UT2312H | UTC
- N-CHANNEL POWER MOSFET
- UNISONIC TECHNOLOGIES CO., LTD UT2312H
5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION The U.
- UNISONIC TECHNOLOGIES CO., LTD UT2312H
5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION The UT2312H uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES * RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and.
