UTG40N65-S | UTC
650V TRENCH GATE FIELD-STOP IGBT
UNISONIC TECHNOLOGIES CO., LTD
UTG40N65-S
Preliminary Insulated Gate Bipolar Transistor
650V TRENCH GATE FIELD-STOP IGBT
DESCRIPTION
The UTC UTG40N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG40N65-S is suitable for the resonant o.
- UTG40N65-S | UTC
- 650V TRENCH GATE FIELD-STOP IGBT
- UNISONIC TECHNOLOGIES CO., LTD
UTG40N65-S
Preliminary Insulated Gate Bipolar Transistor
650V TREN.
- UNISONIC TECHNOLOGIES CO., LTD
UTG40N65-S
Preliminary Insulated Gate Bipolar Transistor
650V TRENCH GATE FIELD-STOP IGBT
DESCRIPTION
The UTC UTG40N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG40N65-S is suitable for the resonant or soft switching applications.
FEATURES
* High s.
