UT100N03-Q Datasheet

UT100N03-Q N-CHANNEL POWER MOSFET

The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 5.3 mΩ @ VGS=10V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.5V, ID=40A 1 TO-220.

Features

* RDS(ON) ≤ 5.3 mΩ @ VGS=10V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.5V, ID=40A 1 TO-220 1 1 TO-263 PDFN5×6
 SYMBOL
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT100N03L-TA3-T UT100N03G-TA3-T TO-220 UT100N03L-TQ2-T UT100N03G-TQ2-T TO-263 UT100N03L-TQ2-R UT100N03G-TQ2-R TO-263 UT100N03L-P5060-R UT100N03G-P5060-R PDFN5×6 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 GDS - - - - GDS - - - - GDS - - - - S S SGDDDD Packing Tube Tube Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of.