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MSC030SDA330B Data Sheet

Zero Recovery Silicon Carbide Schottky Diode

Download MSC030SDA330B Datasheet

MSC030SDA330B

MSC030SDA330B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MS.

MSC030SDA330B

Download MSC030SDA330B Datasheet

MSC030SDA330B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC030SDA330B device is a 3300 V, 30 A SiC SBD in a two-lead TO-247 package. Features The following are key features of the MSC030SDA330B device: • No reverse recovery • Low forward voltage • Low leakage current • RoHS compliant Benefits The following are benefits of the MSC030SDA330B device: • High switching frequency • Low switching losses • Low noise (EMI) switching • Higher reliability systems • Increased system power density Applications The MSC030SDA330B device is designed for the following applications: • Power factor correction (PFC) • A.




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