Download MSC090SMA070B Datasheet
MSC090SMA070B Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC090SMA070B device is a 700 V, 90 mΩ SiC MOSFET in a TO-247 package. 1.1 Features The following are key features of the MSC090SMA070B device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant 1.2 Benefits The following are benefits of the MSC090SMA070B device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership 1.3 Applications The MSC090SMA070B device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution 050-7756 MSC090SMA070B Datasheet Revision A 1 2 Device Specifications This section shows the specifications for the MSC090SMA070B device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC0.