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MSC080SMA120B Data Sheet

N-Channel MOSFET

Download MSC080SMA120B Datasheet

MSC080SMA120B

1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120B Product Overview 1200V, 80 mΩ typical at 20 VGS, Silicon Carbide (SiC) N-Channel MOSFET, TO-247. Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction tem.

MSC080SMA120B

Download MSC080SMA120B Datasheet

1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120B Product Overview 1200V, 80 mΩ typical at 20 VGS, Silicon Carbide (SiC) N-Channel MOSFET, TO-247. Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness • RoHS compliant Benefits • High efficiency to enable lighter and more compact system • Simple to drive and easy to parallel • Improved thermal capabilities and lower switching losses • Eliminates the need for external freewheeling diode • Lower system cost of ownership Applications • Photovoltaic (PV) inverter, converter, and industrial motor drives • Smart grid transmission and distribution • Induction heating and welding • Hybrid Electric Vehicle (HEV) .




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