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MSC080SMA330B4 Data Sheet

N-Channel Power MOSFET

Download MSC080SMA330B4 Datasheet

MSC080SMA330B4

MSC080SMA330B4 3300 V, 80 mΩ SiC N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA.

MSC080SMA330B4

Download MSC080SMA330B4 Datasheet

MSC080SMA330B4 3300 V, 80 mΩ SiC N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA330B4 device is a 3300 V, 80 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense. Features The following are key features of the MSC080SMA330B4 device: • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 150 °C • Fast and reliable body diode • Superior avalanche ruggedness • RoHS compliant Benefits The following are benefits of the MSC080SMA330B4 device: • High efficiency to enable lighter, more compact system • Simple to dri.




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