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MSC2X51SDA120J Data Sheet

Dual Silicon Carbide Schottky Barrier Diodes

Download MSC2X51SDA120J Datasheet

MSC2X51SDA120J

MSC2X51/50SDA120J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MS.

MSC2X51SDA120J

Download MSC2X51SDA120J Datasheet

MSC2X51/50SDA120J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA120J are dual 1200 V, 50 A SiC SBD devices in a SOT-227 package. Figure 1 • Parallel MSC2X51SDA120J Figure 2 • Anti-parallel MSC2X50SDA120J Features The following are key features of the MSC2X51SDA120J and MSC2X50SDA120J devices: • No reverse recovery • Low forward voltage • Low leakage current • Avalanche-energy rated • RoHS compliant • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X51SDA120J and MSC2X50SDA120J devices: • High switching frequency • Low switching losses • Low noise (EMI) switching • Hig.




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