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MSC2X30SDA070J Data Sheet

Dual Silicon Carbide Schottky Barrier Diodes

Download MSC2X30SDA070J Datasheet

MSC2X30SDA070J

MSC2X31/30SDA070J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MS.

MSC2X30SDA070J

Download MSC2X30SDA070J Datasheet

MSC2X31/30SDA070J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X31/30SDA070J are dual 700 V, 30 A SiC SBD devices in a SOT-227 package. Figure 1 • Parallel MSC2X31SDA070J Figure 2 • Anti-parallel MSC2X30SDA070J Features The following are key features of the MSC2X31SDA070J and MSC2X30SDA070J devices: • No reverse recovery • Low forward voltage • Low leakage current • Avalanche-energy rated • RoHS compliant • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X31SDA070J and MSC2X30SDA070J devices: • Outstanding performance at high-frequency operation • Direct mounting to heatsink .




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