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MSC360SMA120B Data Sheet

Silicon Carbide N-Channel Power MOSFET

Download MSC360SMA120B Datasheet

MSC360SMA120B

MSC360SMA120B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC360SMA120.

MSC360SMA120B

Download MSC360SMA120B Datasheet

MSC360SMA120B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC360SMA120B device is a 1200 V, 360 mΩ SiC MOSFET in a TO-247 package. Features The following are key features of the MSC360SMA120B device: • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness • RoHS compliant Benefits The following are benefits of the MSC360SMA120B device: • High efficiency to enable lighter, more compact system • Simple to drive and easy to parallel • Improv.




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