ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM
Plastic Path™ Features
Low Power Monolithic CMOS 512K x 8 SRAM ...
Description
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM
Plastic Path™ Features
Low Power Monolithic CMOS 512K x 8 SRAM s Operating Temperature Range q Full Military (-55°C to +125°C) q Industrial (-40°C to +85°C) s Burn-in and Temperature Cycle Available s 10, 12, 15, 17, 20 & 25ns Access Times s +5V Power Supply s Industry Standard Pinouts q Center Power / Ground Pins s TTL Compatible I/O s 3.3V Device I/O Interfacing s JEDEC Standard 36 pin Plastic SOJ Package q 36 Lead, .93" x .405" x 0.148 Small Outline J lead (SOJ), Aeroflex code# "L2" s Fully Static Operation q No Clocks or Refresh Required
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A E RO
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X LA
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ISO 9001
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RTIFIED
Block Diagram – SOJ (L2)
CE WE OE A0 – A18 Vss Vcc 512Kx8
8
General Description
The ACT-PS512K8 is a Plastic High Speed, 4 Megabit (4,194,304 bits) CMOS Monolithic SRAM organized as 524,288 words by 8 bits. Designed for high-speed, high density, high reliablility, mass memory and fast cache system applications. The plastic monolithic is input and output TTL compatible. Writing is executed when the write enable (WE) and chip enable (CE) inputs are low. Reading is accomplished when WE is high and CE and output enable (OE) are both low. Access time grades of 10ns 12ns, 15ns, 17ns, 20ns and 25ns are standard.
B
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I NC .
I/O0-7
Pin Description I/O0-7 A0–18 WE CE OE VCC VSS NC Data I/O Address Inputs Write Enable Chip Enable Output Enable Power Supply Ground Not Connected
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