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AA022N1-00 Dataheets PDF



Part Number AA022N1-00
Manufacturers Alpha Industries
Logo Alpha Industries
Description 21-24 GHz GaAs MMIC Low Noise Amplifier
Datasheet AA022N1-00 DatasheetAA022N1-00 Datasheet (PDF)

21–24 GHz GaAs MMIC Low Noise Amplifier AA022N1-00 Features I Single Bias Supply Operation (4.5 V) I 2.6 dB Typical Noise Figure at 23 GHz I 19 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF, DC and Noise Figure Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 0.493 0.087 0.000 0.000 0.235 1.056 1.957 2.268 2.355 0.124 0.087 Chip Outline 1.084 1.605 1.829 2.091 1.250 1.172 2.245 1.162 Description Alpha’s three-stage reactively-matched 21–24 GHz MMIC low noise .

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21–24 GHz GaAs MMIC Low Noise Amplifier AA022N1-00 Features I Single Bias Supply Operation (4.5 V) I 2.6 dB Typical Noise Figure at 23 GHz I 19 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF, DC and Noise Figure Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 0.493 0.087 0.000 0.000 0.235 1.056 1.957 2.268 2.355 0.124 0.087 Chip Outline 1.084 1.605 1.829 2.091 1.250 1.172 2.245 1.162 Description Alpha’s three-stage reactively-matched 21–24 GHz MMIC low noise amplifier has typical small signal gain of 19 dB with a typical noise figure of 2.6 dB at 23 GHz. The chip uses Alpha’s proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55°C to +90°C -65°C to +150°C 6 VDC 10 dBm 175°C Electrical Specifications at 25°C (VDS = 4.5 V) Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression1 Thermal Resistance2 1. Not measured on a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip. Condition F = 21–24 GHz F = 23 GHz F = 21–24 GHz F = 21–24 GHz F = 23 GHz Symbol IDS G NF RLI RLO P1 dB ΘJC Min. 16 Typ.3 35 19 2.6 -7 -14 8 92 Max. 50 2.8 -6 -10 Unit mA dB dB dB dB dBm °C/W Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A 1 21–24 GHz GaAs MMIC Low Noise Amplifier AA022N1-00 Typical Performance Data 30 20 10 0 S11 S21 Bias Arrangement VD2 .01 µF 50 pF (dB) -10 -20 -30 -40 -50 -60 17 18 19 20 21 22 23 24 25 26 27 28 29 30 S12 .01 µF VD1 50 pF S22 RF IN RF OUT Frequency (GHz) Typical Small Signal Performance S-Parameters (VD = 4.5 V) 4.5 4.0 Noise Figure (dB) 3.5 3.0 2.5 2.0 17 18 19 20 21 22 23 24 25 26 27 28 29 30 NF 4.5 V NF 3.5 V NF* 2.5 V-5 V Gain* 2.5 V-5 V Gain 3.5 V Gain 4.5 V 25 24 23 22 21 20 19 18 17 16 15 Gain (dB) For biasing on, adjust VDS from zero to the desired value (4.5 V recommended). For biasing off, reverse the biasing on procedure. Circuit Schematic D G Detail A VD2 Frequency (GHz) Typical Gain and Noise Figure Performance for Three Bias Conditions *Special Bias: VD1 = 2.5 V, VD2 = 5.0 V G 37 35 33 31 29 27 25 23 21 19 17 15 RF IN SEE DETAIL A D G D G D RF OUT VD1 24 22 20 18 16 14 12 10 8 6 4 2 1.0 23 GHz Gain (dB) and 23 GHz Noise Figure (dB) Gain Drain Current (mA) ID NF 2.0 3.0 4.0 5.0 6.0 VD1 and VD2 (V) Typical Gain and Noise Figure Performance vs. Drain Bias (VD1 = VD2) 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A .


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