AA028P3-00

27–31 GHz GaAs MMIC Driver Amplifier AA028P3-00 Features 0.380 1.243 2.106 I Single Bias Supply Operation (6 V) I 19 dB Typical Small Signal Gain I 16 dBm Typical P1 dB Output Power at 28 GHz I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.525 1.415 0.763 0.000 0.000 3.050 Description Alpha’s three-stage reactively-matched 27–31 GHz GaAs MMIC driver amplifier has typical small signal gain of 19 dB with a typical P1 dB of 16 dBm at 28 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance. Designed for 27–31 GHz LMDS and digital radio bands. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55°C to +90°C -65°C to +150°C 7 VDC 16 dBm 175°C Electrical Specifications at 25°C (VDS = 6 V) Parameter Drain Current Small Signal Gain Input Return Loss Output Return Loss Ou...