AA035P3-00

31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 Features s Single Bias Supply Operation (5 V) s 19 dB Typical Small Signal Gain s 17 dBm Typical P1 dB Output Power at 35 GHz s 0.25 µm Ti/Pd/Au Gates s 100% On-Wafer RF and DC Testing 0.000 3.810 1.905 1.250 Chip Outline 1.554 2.471 3.386 s 100% Visual Inspection to MIL-STD-883 MT 2010 0.000 Description Alpha’s three-stage reactively-matched Ka band GaAs MMIC driver amplifier has a typical P1 dB of 17 dBm with 18 dB associated gain at 35 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, which is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate solder or epoxy die attach processes. The amplifier is a self-bias design requiring a single positive drain bias to one of any three bonding sites. All chips are screened for S-parameters prior to shipment for guaranteed performance. A broad range of applications exist in both the high reliability and commercial areas where high gain and power are required. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55°C to +90°C -65°C to +150°C 7 VDC 1...