AA038P5-00

37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features s Single Bias Supply Operation (5.5 V) s 18 dB Typical Small Signal Gain s 19 dBm Typical P1 dB Output Power at 39 GHz s 0.25 µm Ti/Pd/Au Gates 0.000 1.342 2.166 2.989 0.470 0.000 3.400 0.112 Chip Outline 1.700 1.230 1.588 s 100% On-Wafer RF and DC Testing s 100% Visual Inspection to MIL-STD-883 MT 2010 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Alpha’s three-stage reactively-matched Ka band GaAs MMIC amplifier has a typical P1 dB of 19 dBm with 17 dB associated gain over the band 37–39 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the high reliability and commercial areas where power and gain are required. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55°C to +90°C -65°C to +150°C 7 VDC 19 dBm 175°C Electrical Specifications at 25°C (VDS = 5.5 V) P...