30V N-Channel Power MOSFET
AAT9121
30V N-Channel Power MOSFET General Description
The AAT9121 30V N-Channel Power MOSFET is a member of AnalogicTec...
Description
AAT9121
30V N-Channel Power MOSFET General Description
The AAT9121 30V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.
Features
PWMSwitch™
VDS(MAX) = 30V ID(MAX) = 8A @ 25°C Low Gate Charge Low RDS(ON): 24 mΩ @VGS = 10V 35 mΩ @ VGS = 4.5V
Applications
DC-DC converters for mobile CPUs Battery-powered portable equipment High power density DC - DC supplies Power supplies
SOP-8 Package
Top View
D 8 D 7 D 6 D 5
Preliminary Information
1 S
2 S
3 S
4 G
Absolute Maximum Ratings
Symbol
VDS VGS ID IDM IS PD TJ, TSTG
(TA=25°C unless otherwise noted) Value
30 ±20 ±8.0 ±6.4 ±24 2.25 2.5 1.6 -55 to 150
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C
1
Units
V
TA = 25°C TA = 70°C
Pulsed Drain Current Continuous Source Current (Source-Drain Diode) 1 TA = 25°C Maximum Power Dissipation 1 TA = 70°C Operating Junction and Storage Temperature Range
A
W °C
Thermal Characteristics
Symbol
RθJA RθJC
Description
Typical Junction-to-Ambient Typical Junction-to-Case
1
Value
50 28
Units
°C/W °C/W
Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width.
9121.2001.12.0.9
1
AAT9121
30V N-Channel Power MOSFET Electrical Characteristics
Symbol Description (TJ=25°C unless otherwise noted) Conditions
VGS=0V, ID=250µA VGS=10V, ID=8A VGS=4.5V, ID=6.6A VGS=10V ,VD...
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