AAT9125

AAT9125 30V N-Channel Power MOSFET General Description The AAT9125 30V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size. Features PWMSwitch™ VDS(MAX) = 30V ID(MAX) = 12.5A @ 25°C Low RDS(ON): 9 mΩ @VGS = 10V 14 mΩ @ VGS = 4.5V Applications DC-DC converters for mobile CPUs Battery-powered portable equipment High power density switch-mode supplies Point-of-use Power Supplies SOP8 Package Preliminary Information Top View D 8 D 7 D 6 D 5 1 S 2 S 3 S 4 G Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25°C unless otherwise noted) Value 30 ±20 ±12.5 ±10 ±52 2.25 2.5 1.6 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C 1 Units V TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (Source-Drain Diode) 1 TA = 25°C Maximum Power Dissipation 1 TA = 70°C Operating Junction and Storage Temperature Range A W °C Thermal Characteristics Symbol RθJA RθJC Description Typical Junction-to-Ambient Typical Junction-to-Case 1 Value 50 25 Units °C/W °C/W Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width 9125.2001.12.0.9 1 AAT9125 30V N-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C unless otherwise noted) Conditions Min 30 7.5 11.5 52 1.0 ±100 1 5 30 31 60 10 9 20 14 100 38 50...