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ABR5000 Dataheets PDF



Part Number ABR5000
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description AVALANCHE BRIDGE RECTIFIERS
Datasheet ABR5000 DatasheetABR5000 Datasheet (PDF)

ABR5000 - ABR5010 PRV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop ldeal for printed circuit board AVALANCHE BRIDGE RECTIFIERS BR50 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530(13.40) 0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40) MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate .

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ABR5000 - ABR5010 PRV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop ldeal for printed circuit board AVALANCHE BRIDGE RECTIFIERS BR50 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530(13.40) 0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40) MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) 0.210(5.30) 0.200(5.10) 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) 0.310(7.87) 0.280(7.11) Metal Heatsink Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Minimum Avalanche Breakdown Voltage at 100 µA Maximum Avalanche Breakdown Voltage at 100 µA Maximum Average Forward Current Tc = 50 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing at ( t < 8.3 ms. ) Maximum Forward Voltage per Diode at I F = 25 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC VBO(min.) VBO(max.) IF(AV) IFSM It VF IR IR(H) RθJC TJ TSTG 2 ABR 5000 50 35 50 100 550 ABR 5001 100 70 100 150 600 ABR 5002 200 140 200 250 700 ABR 5004 400 280 400 450 900 50 400 660 1.1 10 200 1 ABR 5006 600 420 600 700 1150 ABR 5008 800 560 800 900 1350 ABR 5010 1000 700 1000 1100 1550 UNIT Volts Volts Volts Volts Volts Amps. Amps. A2 S Volts µA µA °C/W °C °C - 50 to + 150 - 50 to + 150 Notes : 1 ) Thermal resistance from junction to case with units mounted on heatsink. UPDATE : NOVEMBER 1,1998 RATING AND CHARACTERISTIC CURVES ( ABR5000 - ABR5010) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 50 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 500 8.3 ms SINGLE SINE WAVE JEDEC METHOD AVERAGE FORWARD OUTPUT CURRENT, AMPERES 40 PEAK FORWARD SURGE CURRENT, AMPERES 0 25 50 75 100 125 150 175 400 30 300 20 200 10 10 0 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 TJ = 100 ° C FORWARD CURRENT, AMPERES 10 TJ = 25 °C REVERSE CURRENT, MICROAMPERES 1.0 1.0 Pulse Width .


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