DatasheetsPDF.com

ABR608 Dataheets PDF



Part Number ABR608
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description AVALANCHE BRIDGE RECTIFIERS
Datasheet ABR608 DatasheetABR608 Datasheet (PDF)

ABR600 - ABR610 PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop ldeal for printed circuit board AVALANCHE BRIDGE RECTIFIERS BR6 0.445 (11.30) 0.405 (10.30) 0.158 (4.00) 0.142 (3.60) AC 0.62 (15.75) 0.58 (14.73) 0.127 (3.20) 0.047 (1.20) AC MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame.

  ABR608   ABR608


Document
ABR600 - ABR610 PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop ldeal for printed circuit board AVALANCHE BRIDGE RECTIFIERS BR6 0.445 (11.30) 0.405 (10.30) 0.158 (4.00) 0.142 (3.60) AC 0.62 (15.75) 0.58 (14.73) 0.127 (3.20) 0.047 (1.20) AC MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.6 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.042 (1.06) 0.038 (0.96) 0.75 (19.1) Min. 0.27 (6.9) 0.23 (5.8) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Minimum Avalanche Breakdown Voltage at 100 µA Maximum Avalanche Breakdown Voltage at 100 µA Maximum Average Forward Current Tc = 50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing at ( t < 8.3 ms. ) Maximum Forward Voltage per Diode at IF = 3.0 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC VBO(min.) VBO(max.) IF(AV) IFSM It VF IR IR(H) RθJC TJ TSTG 2 ABR 600 50 35 50 100 550 ABR 601 100 70 100 150 600 ABR 602 200 140 200 250 700 ABR 604 400 280 400 450 900 6.0 200 64 1.0 10 200 8.0 ABR 606 600 420 600 700 1150 ABR 608 800 560 800 900 1350 ABR 610 1000 700 1000 1100 1550 UNITS Volts Volts Volts Volts Volts Amps. Amps. A2S Volts µA µA °C/W °C °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range - 50 to + 150 - 50 to + 150 Notes : 1 ) Thermal resistance from Junction to case with units mounted on a 2.6" x 1.4" x 0.06" THK ( 6.5 x 3.5 x 0.15 cm ) Al. plate. UPDATE : APRIL 21, 1998 RATING AND CHARACTERISTIC CURVES ( ABR600 - ABR610 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 10 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 8.0 HEAT SINK MOUNTING ON 2.6" x 1.4" x0.06" THK. (7.5x7.5x0.3 cm.) Al. Plate PEAK FORWARD SURGE CURRENT, AMPERES 160 6.0 120 TJ = 25 °C 80 8.3 ms SINGLE SINE WAVE JEDEC METHOD 4.0 2.0 40 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 TJ = 100 °C FORWARD CURRENT, AMPERES 10 TJ = 25 °C 1.0 1.0 Pulse Width = 300 µ s 1% Duty Cycle 0.1 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS .


ABR606 ABR608 ABR610


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)