99227 Datasheet: PolarHV Power MOSFET





99227 PolarHV Power MOSFET Datasheet

Part Number 99227
Description PolarHV Power MOSFET
Manufacture IXYS Corporation
Total Page 5 Pages
PDF Download Download 99227 Datasheet PDF

Features: Advanced Technical Information PolarHVT M Power MOSFET Electrically Isolated Ta b, N-Channel Enhancement Mode, Avalanch e Rated IXTC 26N50P VDSS = 500 V = 13 A ID25 RDS(on) = 260 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/ dt PD TJ TJM Tstg TL VISOL FC Weight T est Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continu ous Transient TC = 25°C TC = 25°C, pu lse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt 100 A/µs, VDD ≤ VDSS, TJ ≤ 150° C, RG = 4 Ω TC = 25°C Maximum Ratin gs 500 500 ± 20 ± 30 13 78 26 40 1.0 10 100 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb g Features z Silicon chip on D irect-Copper-Bond substrate - High powe r dissipation - Isolated mounting surfa ce - 2500V electrical isolation z Low d rain to tab capacitance(<30pF) Applicat ions z DC-DC converters z z z z ISOPLU S220TM (IXTC) E153432 G D S Isolate d Tab G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t =.

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Advanced Technical Information
PolarHVTM
Power MOSFET
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Avalanche Rated
IXTC 26N50P
VDSS =
ID25 =
RDS(on) =
500 V
13 A
260 m
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
FC
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
500
500
±20
±30
13
78
26
40
1.0
10
100
-55 ... +150
150
-55 ... +150
300
2500
11..65/2.5..15
2
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
N/lb
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = IT
Pulse test, t 300 µs, duty cycle d 2 %
260 m
ISOPLUS220TM (IXTC)
E153432
G
DS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99227(10/04)

              






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