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Advanced Technical Information PolarHVTM Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated IXTC 26N50P VDSS = 500 V = 13 A ID25 RDS(on) = 260 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 13 78 26 40 1.0 10 100 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb g Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z z z z ISOPLUS220TM (IXTC) E153432 G D S Isolated Tab G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force 300 2500 11..65/2.5..15 2 Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 2.5 5.0 ±100 25 250 260 V V nA µA µA mΩ Advantages z Easy assembly z z Space savings High power density VGS...