PNP Transistor. A1015 Datasheet
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Audio Frequency Amplifier Applications
Low Noise Amplifier Applications
• High voltage and high current: VCEO = −50 V (min),
IC = −150 mA (max)
• Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
• Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
• Complementary to 2SC1815 (L)
Absolute Maximum Ratings (Ta = 25°C)
VCBO −50 V
VCEO −50 V
VEBO −5 V
IB −50 mA
Collector power dissipation
PC 400 mW
Storage temperature range
Tj 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.)
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Collector cut-off current
VCB = −50 V, IE = 0
Emitter cut-off current
VEB = −5 V, IC = 0
DC current gain
VCE = −6 V, IC = −2 mA
hFE (2) VCE = −6 V, IC = −150 mA
Collector-emitter saturation voltage
VCE (sat) IC = −100 mA, IB = −10 mA
Base-emitter saturation voltage
VBE (sat) IC = −100 mA, IB = −10 mA
fT VCE = −10 V, IC = −1 mA
Collector output capacitance
VCB = −10 V, IE = 0
f = 1 MHz
Base intrinsic resistance
VCB = −10 V, IE = 1 mA
f = 30 MHz
VCE = −6 V, IC = −0.1 mA
f = 100 Hz, RG = 10 kΩ
VCE = −6 V, IC = −0.1 mA
f = 1 kHz, RG = 10 kΩ
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
70 ⎯ 400
25 80 ⎯
⎯ −0.1 −0.3 V
⎯ ⎯ −1.1 V
80 ⎯ ⎯ MHz
⎯ 30 ⎯
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