A1015

KSA1015 KSA1015 LOW FREQUENCY AMPLIFIER Collector-Base Voltage : VCBO= -50V Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TST9 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -50 -50 -5 -150 -50 400 125 -65 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -10µA, IC=0 VCB= -50V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -2mA VCE= -6V, IC= -150mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -10V, IC=-1mA VCB= -10V, IE=0, f=1MHz VCE= -6V, IC= -0.1mA f=100Hz, RG=10kΩ 80 4 0.5 7 6 70 25 -0.1 Min. -50 -50 -5 -0.1 -0.1 400 -0.3 -1.1 V V MHz pF dB Typ. Max. Units V V V µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 GR 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 KSA1015 Typical Ch...