A29DL324

A29DL324 Series 32M-Bit CMOS Low Voltage Dual Operation Flash Memory Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode) Features n Two bank organization enabling simultaneous execution of erase / program and read n Bank organization: 2 banks (16 Mbits + 16 Mbits) n Memory organization: - 4,194,304 words x 8 bits (BYTE mode) - 2,097,152 words x 16 bits (WORD mode) n Sector organization: 71 sectors (8 Kbytes / 4 Kwords × 8 sectors, 64 Kbytes / 32 Kwords × 63 sectors) n 2 types of sector organization - T type: Boot sector allocated to the highest address (sector) - B type: Boot sector allocated to the lowest address (sector) n 3-state output n Automatic program - Program suspend / resume n Unlock bypass program n Automatic erase - Chip erase - Sector erase (sectors can be combined freely) n Erase suspend / resume n Program / Erase completion detection - Detection through data polling and toggle bits - Detection through RY/ BY pin n Sector group protection - Any sector group can be protected - Any protected sector group can be temporary unprotected n Sectors can be used for boot application n Hardware reset and standby using RESET pin n Automatic sleep mode n Boot block sector protect by WP (ACC) pin n Conforms to common flash memory interface (CFI) n Extra One Time Protect Sector provided Part No. Access time (Max.) Operating Power supply current Standby supply (Active mode) current voltage (Max.) (Max.) A29DL324 90ns 2.7V~ 3.6V 16mA 30mA 5 A n Opera...