A61L6316

A61L6316 Series 64K X 16 BIT HIGH SPEED CMOS SRAM Document Title 64K X 16 BIT HIGH SPEED CMOS SRAM Revision History Rev. No. 0.0 1.0 1.1 History Initial issue Final spec. release Add -10 spec. Change ICC1 from 120mA to 220mA (-12) Change ICC1 from 100mA to 210mA (-15) Change ISB1 from 8mA to 12mA Change ICDR from 1mA to 5mA Add tBE, tBLZ, tBHZ, tBW parameters Add -25°C ~ +85°C grade Issue Date July 14, 2000 May 8, 2001 Remark Preliminary Final July 17, 2002 (July, 2002, Version 1.1) AMIC Technology, Inc. A61L6316 Series 64K X 16 BIT HIGH SPEED CMOS SRAM Features General Description n Center power pinout n Supply voltage: -10: 3.3V+10%, -5% -12, -15: 3.3V±10% n Access times: 10/12/15 ns (max.) n Current: Operating: -10: 230mA (max) -12: 220mA (max.) -15: 210mA (max.) Standby: TTL: 25mA (max.) CMOS: 12mA (max.) n Extended operating temperature range: -25°C to 85°C for -I series n Full static operation, no clock or refreshing required n All inputs and outputs are directly TTL-compatible n Common I/O using three-state output n Data retention voltage: 2V (min.) n Available in 44-pin 400mil SOJ and 44-pin 400mil TSOP(II) forward packages. The A61L6316 is a high speed 1,048,576-bit static random access memory organized as 65,536 words by 16 bits and operates on low power supply voltage from 3.0V to 3.6V. It is built using AMIC’s high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus str...