Document
PRE
. ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som
ARY N I M I L
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT15SM-24
GENERAL INVERTER • UPS USE
CT15SM-24
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5 1.5
r
5.0 2
2
19.5MIN.
4
20.0
φ 3.2
4.4
1.0 q 5.45 w e 5.45
0.6
2.8
4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e
¡VCES ............................................................................. 1200V ¡IC ......................................................................................... 15A ¡High Speed Switching ¡Low VCE Saturation Voltage
q
TO-3P
APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc.
MAXIMUM RATINGS
Symbol VCES VGES VGEM IC ICM PC Tj Tstg —
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight VGE = 0V VCE = 0V VCE = 0V
Conditions
Ratings 1200 ±20 ±30 15 30 250 –40 ~ +150 –40 ~ +150 4.8
Unit V V V A A W °C °C g
Feb.1999
Typical value
PRE
. ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som
ARY N I M I L
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT15SM-24
GENERAL INVERTER • UPS USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CES IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Rth (j-c) Parameter
(Tj = 25°C)
Test conditions IC = 1mA, VGE = 0V VGE = ±30V, VCE = 0V VCE = 1200V, VGE = 0V IC = 1.5mA, VCE = 10V IC = 15A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz
Limits Min. 1200 — — 4.5 — — — — — — — — — Typ. — — — 6.0 2.7 1600 150 45 50 150 150 250 — Max. — ±0.5 1 7.5 3.6 — — — — — — — 0.50
Unit V µA mA V V pF pF pF ns ns ns ns °C/W
Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance
VCC = 600V, Resistance load, IC = 15A, VGE = 15V, RGE = 20Ω Junction to case
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10
Tj = 25°C
20 COLLECTOR CURRENT IC (A)
VGE = 20V 15V
OUTPUT CHARACTERISTICS (TYPICAL)
Tj = 25°C 11V
16
8
12
10V
6
8
4
IC = 30A 15A
4
9V
2
10A
0
0
2
4
6
8
10
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
Feb.1999
PRE
. ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som
ARY N I M I L
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT15SM-24
GENERAL INVERTER • UPS USE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V)
5
COLLECTOR CURRENT IC (A)
VGE.