CT20VS-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE CT20VS-8 OUTLINE DRAWING 1.5MAX. Dimensions in mm r 10.5MAX. 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 +0.3 –0 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 q q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES ............................................................................... 400V ¡ICM ................................................................................... 130A TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1 Ratings 400 ±30 ±40 130 –40 ~ +150 –40 ~ +150 4.5 Unit V V V A °C °C ELECTRICAL CHARACTERISTICS Symbol V(BR)CES ICES IGES VGE(th) Parameter (Tj = 25°C) Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA Limits Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 7.0 Unit V µA µA V Feb.1999 Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage (1.5) MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 800µF 160 < 50°C TC = PULSE COLLECTOR CURRENT ICM (A) MAXIMUM PULSE COLLECTOR CURRENT 2...