MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT25ASJ-8
STROBE FLASHER USE
CT25ASJ-8
OUTLINE DRAWING
6.5 5.0 ± 0.2
4
...
MITSUBISHI INSULATED GATE BIPOLAR
TRANSISTOR
CT25ASJ-8
STROBE FLASHER USE
CT25ASJ-8
OUTLINE DRAWING
6.5 5.0 ± 0.2
4
Dimensions in mm
5.5 ± 0.2
1.5 ± 0.2
0.5 ± 0.1
1.0MAX.
1.0
0.9MAX.
2.3MIN.
10MAX.
0.5 ± 0.2 2.3 2.3 0.8
2.3
1
2
3
wr q GATE w COLLECTOR e EMITTER r COLLECTOR e
q
¡VCES ................................................................................ 400V ¡ICM .................................................................................... 150A ¡Drive Voltage VGE=4V ¡Small Package MP-3
MP-3
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature VGE = 0V
Conditions
Ratings 400 ±6 ±8 150 –40 ~ +150 –40 ~ +150
Unit V V V A °C °C
See figure 1
ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES ICES IGES VGE(th) Parameter
(Tj = 25°C)
Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±6V, VCE = 0V VCE = 10V, IC = 1mA
Limits Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 1.5
Unit V µA µA V
Feb.1999
Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage
MITSUBISHI INSULATED GATE BIPOLAR
TRANSISTOR
CT25ASJ-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT 160
CM = 400µF
PULSE COLLECTOR CURRENT ICM (A)
120
80
40
TC ≤ 70°C
0
0
2
4
6
8
GATE-EMITT...
