MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30TM-8
STROBE FLASHER USE
CT30TM-8
OUTLINE DRAWING
10.5MAX. 5.2
Dimen...
MITSUBISHI INSULATED GATE BIPOLAR
TRANSISTOR
CT30TM-8
STROBE FLASHER USE
CT30TM-8
OUTLINE DRAWING
10.5MAX. 5.2
Dimensions in mm
2.8
5.0
1.2
φ 3.2 1.3MAX. 0.8
17
13.5MIN.
3.8MAX.
8.5
2.54
2.54
0.5
2.6
q w e w
q
q GATE w COLLECTOR e EMITTER
¡VCES ............................................................................... 400V ¡ICM ................................................................................... 180A
e
TO-220F
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature
Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1
Ratings 400 ±30 ±40 180 –40 ~ +150 –40 ~ +150
4.7MAX.
Unit V V V A °C °C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES ICES IGES VGE(th) Parameter
(Tj = 25°C)
Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA
Limits Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 7.0
Unit V µA µA V
Feb.1999
Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage
MITSUBISHI INSULATED GATE BIPOLAR
TRANSISTOR
CT30TM-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1000µF 160
MAIN CAPACITOR CM (µF)
PULSE COLLECTOR CURRENT ICM (A)
MAXIMUM PULSE COLLECTOR CURRENT 2000
TC < = 50°C
...
