MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VS-8
STROBE FLASHER USE
CT30VS-8
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
...
MITSUBISHI INSULATED GATE BIPOLAR
TRANSISTOR
CT30VS-8
STROBE FLASHER USE
CT30VS-8
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
Dimensions in mm
4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 +0.3 –0.5
0
+0.3 –0
1 5 0.8 0.5
q w e wr
2.6 ± 0.4
q
q GATE w COLLECTOR e EMITTER r COLLECTOR e
¡VCES ............................................................................... 400V ¡ICM ................................................................................... 180A
TO-220S
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature
Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1
Ratings 400 ±30 ±40 180 –40 ~ +150 –40 ~ +150
4.5
Unit V V V A °C °C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES ICES IGES VGE(th) Parameter
(Tj = 25°C)
Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA
Limits Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 7.0
Unit V µA µA V
Feb.1999
Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage
(1.5)
MITSUBISHI INSULATED GATE BIPOLAR
TRANSISTOR
CT30VS-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1000µF 160 MAIN CAPACITOR CM (µF) TC < = 50°C TC < = 70°C MAXIMUM PULSE COLLECTOR CURRENT 2...