CT60AM-18B

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 6 φ 3.2 26 4 1 2 1 1 2 3 20.6MIN. 2.5 0.5 5.45 5.45 3 4.0 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES ............................................................................... 900V ¡IC ......................................................................................... 60A ¡Integrated Fast Recovery Diode q TO-3PL APPLICATION Microwave ovens, electromagnetic cooking devices, rice-cookers, voltage-resonant inverter circuit electric appliances. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature TC = 25°C VGE = 0V VCE = 0V VCE = 0V Conditions Ratings 900 ±20 ±30 60 120 40 200 –40 ~ +150 –40 ~ +150 Unit V V V A A A W °C °C Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted) Symbol V (BR) CES ICES IGES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Etail ICtail VEC Trr Rth (j-c) Rth (j-c) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitanc...