CT60AM-18F

MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 φ3.2 6 1 2 1 Œ  Ž 0.5 3 5.45 5.45 q VCES ............................................................................... 900V q IC ......................................................................................... 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage 4.0  Œ GATE  COLLECTOR Ž EMITTER  COLLECTOR Ž Œ TO-3PL APPLICATION Microwave oven, Electromagnetic cooking devices, Rice-cookers MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM IE PC Tj T stg (Tc = 25°C) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Peak Gate-Emitter Voltage Collector Current Collector Current (Pulse) Emitter Current Maximum Power Dissipation Junction Temperature Storage Temperature VGE = 0V Conditions Ratings 900 ±25 ±30 60 120 40 180 –40 ~ +150 –40 ~ +150 20.6MIN. 2.5 26  Unit V V V A A A W °C °C Sep. 2000 MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR ELECTRICAL CHARACTERISTICS Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Etail Itail VEC trr Rth(j-c) Rth(j-c) Parameter Collector cutoff current Gate leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on deray time Turn-on rise time Turn-off delay time Turn-off fall time Tail loss Tail cur...