AT-42000

Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz High Gain-Bandwidth Product: 9.0 GHz Typical fT This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz , makes this device easy to use as a low noise amplifier. The AT-42000 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. The recommended assembly procedure is gold-eutectic die attach at 400oC and either wedge or ball bonding using 0.7 mil gold wire. See APPLICATIONS section, “Chip Use”. Chip Outline Description Hewlett-Packard’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impe...