AT002S3-11

GaAs 35 dB IC Voltage Variable Single Control Attenuator 0.4–2.5 GHz AT002S3-11 Features s Single Positive Control Voltage s 35 dB Attenuation Range s 8 Lead Hermetic Surface Mount Package s Capable of Meeting MIL-STD Requirements5 -11 ORIENTATION MARK 0.180 (4.57 mm) SQ. MAX. 0.150 (3.81 mm) 0.017 (0.43 mm) 0.013 (0.33 mm) 0.050 (1.27 mm) TYP. 0.400 (10.16 mm) 0.380 (9.65 mm) Description The AT002S3-11 is a GaAs IC FET absorptive bridged “T” attenuator. This attenuator operates from 0.4–2.5 GHz and provides up to 35 dB of attenuation. The key feature of this attenuator is the requirement of only one “positive” control voltage. Blocking capacitors are required on the RF ports. 0.070 (1.78 mm) 0.040 (1.02 mm) 0.075 (1.91 mm) MAX. 0.006 (0.15 mm) 0.004 (0.10 mm) 0.250 (6.35 mm) 0.200 (5.08 mm) Electrical Specifications at 25°C Parameter1 Insertion Loss (V1 = 5 V)2 Frequency 0.4–1.0 GHz 1.0–2.0 GHz 1.0–2.5 GHz 0.4–1.0 GHz 1.0–2.5 GHz 0.4–2.5 GHz 30 33 Min. Typ. 1.5 1.7 2.2 35 38 2.2:1 2.5:1 Max. 1.7 2.0 2.5 Unit dB dB dB dB dB Attenuation Range (V1 = 0) VSWR (I/O)3 Operating Characteristics at 25°C Parameter Switching Characteristics Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru4 0–10 dB 11–20 dB 21–30 dB 31–Max. For All Attenuation Levels VLow = 0 to -0.2 V @ 25 µA Max. VHigh = 5 V @ 100 µA Typ. 5 V @ 100 µA Max. 0.4–2.5 GHz Frequency Min. Typ. 0.5 1.0 20 ±1.0 ±1.5 ±3.0 ±4.0 -3 Max. Unit µs µs mV dB dB dB dB dBm Attenuation...