AT10-0009-TB

Voltage Variable Absorptive Attenuator, 800 - 1000 MHz V 7.00 AT10-0009 Features n n n n n n n n n n SOW-16 Input IP3: +31 dBm Min. (Full Attenuation Range) Input IP3 is 15 -20 dB Better Than GaAs Linear Operation: +20 dBm Min. Plastic SOIC, Wide Body, SMT Package 38 dB Dynamic Range (With 30 mA Bias Current) Single Control Voltage 50 ohm Impedance Linear Driver, DR65-0002, Available Test Boards are Available Tape and Reel Packaging Available Description M/A-COM's AT10-0009 is a PIN diode based voltage variable attenuator. This device is in a SOIC-16, wide body plastic surface mount package. These attenuators have linear operating power and input intercept point levels 15 - 20 dB better than GaAs FET MMIC voltage variable attenuators. They are ideally suited for use where low distortion, high linear operating power and high dynamic range are required. These devices are optimized for the GSM frequency band, but exhibit excellent performance and repeatability over the entire specified frequency band. The AT10-0009 is ideally suited for wireless communications systems. Package outline conforms to JEDEC standard MS-013AA. Electrical Specifications: TA = 25°C Parameter Insertion Loss Attenuation (Above Loss) Frequency Flatness VSWR Switching Speed Linear Operation Input IP3 I Control Test Conditions 0 volts 12 mA bias current 0 to 30 dB attenuation 0 to 30 dB attenuation 50% Control to 90%/10% RF — Two-tone inputs up to +10 dBm — Frequency 800-1000 MHz 925 - 960 MHz 800-100...