D
TO-247
G S
ARF444 300W 300V 13.56MHz ARF445 300W 300V 13.56MHz
THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445.
...
D
TO-247
G S
ARF444 300W 300V 13.56MHz ARF445 300W 300V 13.56MHz
THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445.
RF OPERATION (1-15MHz )
POWER MOS IV ®
N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET
The ARF444 and ARF445 comprise a symmetric pair of RF power
transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications.
Specified 300 Volt, 13.56 MHz Characteristics: Output Power = 300 Watts. Gain = 18.7dB (Typ.) Efficiency = 83% (Typ.)
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case
Low Cost Common Source RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability.
All Ratings: TC = 25°C unless otherwise specified.
ARF444/445 UNIT Volts
900 900 6.5 ±30 208 0.60 -55 to 150 300
Amps Volts Watts °C/W °C
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
1
MIN
TYP
MAX
UNIT Volts
900 7 250 1000 ±100 4 2 5.7 5
nA mhos Volts µA
VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH)
(ID(ON) = 3.5A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain ...