D G S
TO-247
ARF446 ARF447
Common Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE 250V 250W 65MHz
The ARF446 and ...
D G S
TO-247
ARF446 ARF447
Common Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE 250V 250W 65MHz
The ARF446 and ARF447 comprise a symmetric pair of common source RF power
transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
Specified 250 Volt, 40.68 MHz Characteristics: Output Power = 250 Watts. Gain = 15dB (Class C) Efficiency = 75%
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case
Low Cost Common Source RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability.
All Ratings: TC = 25°C unless otherwise specified.
ARF446/447 UNIT Volts
900 900 6.5 ±30 230 0.55 -55 to 150 300
Amps Volts Watts °C/W °C
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
1
MIN
TYP
MAX
UNIT Volts
900 7 25 250 ±100 4 2 5.7 5
nA mhos Volts µA
VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH)
(ID(ON) = 3.5A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ...