ARF450

Common Source Push-Pull Pair ARF450 ARF450 BeO 11405 RF POWER MOSFET • Specified 150 Volt, 81.36 MHz Characteristics: • Output Power = 500 Watts. • Gain = 13dB (Class C) • Efficiency = 75% MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C N - CHANNEL ENHANCEMENT MODE 150V 500W 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz. • High Performance Push-Pull RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified. ARF450 UNIT Volts Amps Volts Watts °C 450 450 11 ±30 650 -55 to 200 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1 gfs2 Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts µA nA mhos 500 5 25 250 ±100 3 0.9 3 5.8 1.1 5 (ID(ON) = 5.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Lea...