D G S
TO-247
ARF462A ARF462B
Common Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE 65V 150W 65MHz
The ARF462A an...
D G S
TO-247
ARF462A ARF462B
Common Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE 65V 150W 65MHz
The ARF462A and ARF462B comprise a symmetric pair of common source RF power
transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation.
Specified 65 Volt, 40.68 MHz Characteristics: Output Power = 150 Watts. Gain = 15dB (Class AB) Efficiency = 75% (Class C)
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD RqJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage
Low Cost Common Source RF Package. Low Vth thermal coefficient. Low Thermal Resistance. Optimized SOA for Superior Ruggedness.
Continuous Drain Current @ TC = 25°C Gate-Source Voltage
Total Power Dissipation @ TC = 25°C Junction to Case
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
P
E R
1
M I L
A IN
All Ratings: TC = 25°C unless otherwise specified.
ARF462A/B UNIT Volts
Y R
200 200 23 ±30 250 0.50 -55 to 150 300
Amps Volts Watts °C/W °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage (I D(ON) = 11.5A, VGS = 10V) MIN TYP MAX UNIT Volts
200 2.5 25
µA
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VD...