ARF612

ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - FAST RECOVERY DIODE ARF612 Repetitive voltage up to Mean forward current Surge current 1500 V 425 A 4 kA FINAL SPECIFICATION feb 97 - ISSUE : 03 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM V RSM I RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 150 150 150 1500 1600 40 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM 150 425 425 3.8 72 x1E3 A A kA A²s V V mohm F (AV) FSM I² t V FM V F(TO) r F Forward current = 1000 A 25 150 150 2.6 1.15 1.141 SWITCHING t rr Q rr I rr s V FR Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Peak forward recovery di/dt= 400 A/µs 150 IF= di/dt= VR = 200 A 50 A/µs 100 V 105 0.4 9 V A 150 4 210 µs µC MOUNTING R th(j-h) T F j Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled 95 -30 / 150 4.5 / 5.0 55 °C/kW °C kN g ORDERING INFORMATION : ARF612 S 15 standard specification VRRM/100 ARF...