AS148-24

GaAs IC High Isolation Positive Control SPDT Switch DC–2.5 GHz AS148-24 Features s Positive Voltage Control s High Isolation (50 dB @ 0.9 GHz and 1.9 GHz) s Low DC Power Consumption s Base Station Synthesizer Switch 0.050 (1.27 mm) 0.016 (0.40 mm) 0.158 (4.01 mm) 0.150 (3.81 mm) PIN 1 INDICATOR PIN 1 SOIC-14 PIN 14 0.050 (1.27 mm) BSC 0.244 (6.20 mm) 0.228 (5.80 mm) 0.020 (0.51 mm) 0.013 (0.33 mm) 0.049 (1.24 mm) 0.016 (0.41 mm) Description GaAs FET IC SPDT switch packaged in an SOIC-14 plastic package for low cost commercial applications. Ideal building block for base station dual band applications where synthesizer isolation is critical. Use in conjunction with the AS123-12 SPST switch to meet GSM synthesizer isolation requirement. 0.068 (1.73 mm) MAX. 0.016 MAX. (0.41 mm) x 45˚ CHAMFER 8˚ MAX. 0.344 (8.75 mm) 0.337 (8.55 mm) 0.010 (0.25 mm) 0.0098 (0.25 mm) 0.004 (0.10 mm) 0.0075 (0.19 mm) 0.158 (4.00 mm) 0.150 (3.80 mm) Electrical Specifications at 25°C (0, +5 V) Parameter1 Insertion Loss3 Frequency2 DC–1.0 GHz DC–2.0 GHz DC–2.5 GHz DC–1.0 GHz DC–2.0 GHz DC–2.5 GHz DC–2.0 GHz DC–2.5 GHz 44 45 32 Min. Typ. 0.6 0.8 1.2 50 50 42 1.3:1 1.5:1 1.5:1 1.8:1 Max. 0.9 1.1 1.4 Unit dB dB dB dB dB dB Isolation VSWR4 Operating Characteristics at 25°C (0, +5 V) Parameter Switching Characteristics5 Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru Two-tone Input Power +10 dBm 0.5–2.0 GHz VLow = 0 to 0.2 V @ 20 µA Max. VHigh = +5 V @ 200 µ...