AS150-59

GaAs IC High Power SPDT Switch Positive Control DC–3 GHz AS150-59 Features I High Linearity (IP3 55 dBm @ 1.9 GHz) I High Isolation (22 dB @ 1.9 GHz) I Low Insertion Loss (0.55 dB @ 1.9 GHz) I Low DC Power Consumption I Positive 3 V or 5 V Control Voltage PIN 1 0.012 (0.30 mm) + 0.006 (0.15 mm) - 0.002 (0.05 mm) MSOP-8 0.0256 (0.65 mm) TYP. PIN 1 INDICATOR 0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ. 0.193 (4.90 mm) REF. Description The AS150-59 is an IC FET SPDT switch in a MSOP-8 plastic package. This switch has been designed for use where extremely high linearity and low insertion loss are required. It is controlled with positive voltage eliminating the need for negative voltage. Some standard implementations include antenna changeover, T/R and diversity switching over 2 W.The AS150-59 switch can be used in many analog and digital wireless communication systems. 7.0˚ 0.038 (0.95 mm) TYP. 0.030 (0.75 mm) 0.017 (0.43 mm) 0.007 (0.18 mm) ± 0.005 (0.12 mm) 8.0˚ MAX. 0.006 (0.15 mm) 0.002 (0.05 mm) 0.028 (0.70 mm) 0.016 (0.40 mm) Electrical Specifications at 25°C (0, +5 V) Parameter1 Insertion Loss3 Frequency2 DC–1.0 GHz 1.0–2.0 GHz 2.0–3.0 GHz DC–1.0 GHz 1.0–2.0 GHz 2.0–3.0 GHz DC–1.0 GHz 1.0–2.0 GHz 2.0–3.0 GHz 19 18 20 Min. Typ. 0.45 0.6 0.9 22 20 23 1.2:1 1.3:1 1.7:1 1.3:1 1.4:1 1.8:1 Max. 0.55 0.75 1.2 Unit dB dB dB dB dB dB Isolation VSWR4 Operating Characteristics at 25°C (0, +5 V) Parameter Switching Characteristics5 Condition Rise, Fall (10/90% or 90/10% RF) On, O...