AS192-300

PHEMT GaAs IC High Power SP4T Switch 0.1–2.5 GHz AS192-300 Features s 4 Symmetric RF Paths s Positive Voltage Control s High IP3 s Excellent Harmonic Performance s Handles GSM Power Levels s Available in MLF-16 (4 x 4 mm) Package 0.067 (1.70 mm) ± 0.006 (0.15 mm) 0.067 (1.70 mm) ± 0.006 (0.15 mm) SEATING PLANE 16 1 MLF-16 (4 x 4 mm) 0.157 (4.00 mm) BSC PIN 1 INDICATOR 0.148 (3.75 mm) BSC 1 2 3 16 0.039 (1.00 mm) MAX. 0.148 (3.75 mm) 0.001 BSC (0.025 mm) ± 0.001 0.157 12˚ (0.025 mm) (4.00 mm) MAX. BSC Description The AS192-300 is a reflective SP4T switch. It is an ideal switch for higher power applications. It can be used for GSM dual band handset applications where both low loss, low current and small size are critical parameters. 2 3 0.078 (1.95 mm) REF. 0.026 (0.65 mm) BSC 0.078 (1.95 mm) REF. Electrical Specifications at 25°C (0, +4.5 V) Parameter Insertion Loss Ant-J1, J2, J3, J4 Frequency 0.1–0.5 0.5–1.0 1.0–2.0 2.0–2.5 0.1–0.5 0.5–1.0 1.0–2.0 2.0–2.5 GHz GHz GHz GHz GHz GHz GHz GHz 30 25 19 18 Min. Typ. 0.90 0.95 1.00 1.10 34 29 23 21 1.3:1 1.4:1 Max. 1.1 1.1 1.2 1.3 Unit dB dB dB dB dB dB dB dB Isolation Ant-J1, J2, J3, J4 VSWR 0.1–1.0 GHz 1.0–2.5 GHz Operating Characteristics at 25°C (0, +4.5 V) Parameter Switching Characteristics Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru 13 dBm/Tone 34 dBm Input 900 MHz VLow = 0 VHigh = +4.5 V @ 200 µA Max. for RF power > 30 dBm VHigh = +3.0 V @ 200 µA Max. for RF power 20–3...