PHEMT GaAs IC High Power SP5T Switch 0.1-2 GHz
Preliminary
PHEMT GaAs IC High Power SP5T Switch 0.1–2 GHz
AS195-306 Features
I 5 Symmetric RF Paths I Positive Voltage...
Description
Preliminary
PHEMT GaAs IC High Power SP5T Switch 0.1–2 GHz
AS195-306 Features
I 5 Symmetric RF Paths I Positive Voltage Control I High IP3 I Excellent Harmonic Performance I Handles GSM Power Levels I Available in MLF-16 (4 x 4 mm) Package
0.15 (2.10 mm) 0.006 (0.083 mm) 0.011 (0.28 mm) + 0.003 (0.07 mm) - 0.002 (0.05 mm)
16 1
MLF-16 (4 x 4 mm)
0.039 (1.00 mm) MAX.
16
PIN 1 INDICATOR
1
0.157 (4.00 mm) SQ. BSC
0.001 (0.025 mm)
SEATING PLANE
0.083 (2.10 mm)
0.078 (1.95 mm) REF. 4 x 0.016 (0.40 mm) 0.026 (0.65 mm) BSC
Description
The AS195-300 is a reflective SP5T switch. It is an ideal switch for higher power applications. It can be used for GSM dual band handset applications where both low loss, low current and small size are critical parameters.
0.024 (0.60 mm) + 0.006 (0.15 mm - 0.004 (0.10 mm)
0.078 (1.95 mm) REF.
Electrical Specifications at 25°C (0, +3 V)
Parameter Insertion Loss Ant-J1, J2, J3, J4, J5 Frequency 0.1–0.5 GHz 0.5–1.0 GHz 1.0–2.0 GHz 0.1–0.5 GHz 0.5–1.0 GHz 1.0–2.0 GHz 0.1–1.0 GHz 1.0–2.0 GHz 30 25 21 Min. Typ. 0.5 0.6 1.0 35 27 23 1.4:1 1.6:1 Max. 0.7 0.8 1.1 Unit dB dB dB dB dB dB
Isolation
Ant-J1, J2, J3, J4, J5
VSWR
Operating Characteristics at 25°C (0, +3 V)
Parameter Switching Characteristics Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru 13 dBm/Tone 34 dBm Input 900 MHz VLow = 0 VHigh = +3 V @ 200 µA Max. Frequency Min. Typ. 50 100 50 +55 +65 Max. Unit ns ns mV dBm dBc
IP3 2nd and 3rd Harmoni...
Similar Datasheet