ASI2010
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2010 is Designed for General Purpose Class C Power Amplif...
ASI2010
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
B
FEATURES:
PG = 5 dB min. at 10 W/ 2,000 MHz Hermetic Microstrip Package Omnigold™ Metalization System
L
G
H J
F I K M NP
DIM A B
MINIMUM
inches / mm
MAXIMUM
inches / mm
.028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78
.032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG θ JC 1.5 A 35 V 35 W @ TC = 25 C -65 OC to +200 OC -65 C to +200 C 5.0 C/W
O O O O
C D E F G H I J K L M N P
ORDER CODE: ASI10530
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVEBO ICBO hFE Cob PG ηC IC = 5 mA IC = 15 mA IE = 1 mA VCB = 28 V
TC = 25 C
O
NONETEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
45 45 3.5 5.0
UNITS
V V V mA --pF dB %
VCE = 5.0 V VCB = 28 V VCC = 28 V
IC = 1000 mA f = 1.0 MHz POUT = 10 W f = 2.0 GHz
15
120 7.5
5.0 35
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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