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ASI2223-4

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

ASI2223-4 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: The ASI 2223-4 is Designed for 2X B C...


Advanced Semiconductor

ASI2223-4

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Description
ASI2223-4 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: The ASI 2223-4 is Designed for 2X B C F ØD E 4x .062 x 45° A .025 x 45° FEATURES: Input Matching Network Omnigold™ Metalization System DIM H L G I J K P M MINIMUM inches / mm N MAXIMUM inches / mm MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC O A B C .020 / 0.51 .100 / 2.54 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .450 / 11.43 .125 / 3.18 .640 / 16.26 .890 / 22.61 .395 / 10.03 .004 / 0.10 .052 / 1.32 .118 / 3.00 .030 / 0.76 .396 / 10.06 .130 / 3.30 .407 / 10.34 0.75 A 26 V 15.9 W @ TC = 25 OC -65 C to +200 C -65 C to +200 C 11.0 C/W O O O O D E F G H I J K L M N P .660 / 16.76 .910 / 23.11 .415 / 10.54 .007 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84 ORDER CODE: ASI10531 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE PG ηC TC = 25 C O NONETEST CONDITIONS IC = 5.0 mA IC = 10 mA IE = 1.0 mA VCB = 22 V VCE = 5.0 V VCC = 22 V IC = 500 mA POUT = 4.0 W f = 2.2 – 2.3 GHz RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 40 40 3.5 1.0 10 8.0 40 100 UNITS V V V mA --dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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