ASI2307

ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. B PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER FEATURES: PG = 9.5 dB min. at 7 W / 2300 MHz Hermetic Microstrip Package Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 1.2 A 26 V 21.4 W @ TC ≤ 50 C O B C D E F G H I J K L M N P -65 OC to +200 OC -65 OC to +200 OC 7.0 OC/W ORDER CODE: ASI10536 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE Cob PG ηC IC = 1 mA IC = 5 mA IE = 1 mA VCB = 22 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 44 44 3.5 0.5 UNITS V V V mA --pF dB % VCE = 5.0 V VCB = 22 V VCC = 22 V IC = 500 mA f = 1.0 MHz POUT = 7.0 W f = 2.3 GHz 30 300 8.5 9.5 33 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...