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ALR015

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: The ASI ALR015 is Designed for 4x .062 x ...


Advanced Semiconductor

ALR015

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Description
ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: The ASI ALR015 is Designed for 4x .062 x 45° 2xB D G ØE F A .040 x 45° C FEATURES: Input Matching Network Omnigold™ Metalization System M H I J K L R N DIM A B MINIMUM inches / mm P MAXIMUM inches / mm .095 / 2.41 .100 / 2.54 .050 / 1.27 .286 / 7.26 .110 / 2.79 .306 / 7.77 .148 / 3.76 .400 / 10.16 .119 / 3.02 .552 / 14.02 .790 / 20.07 .300 / 7.62 .003 / 0.08 .052 / 1.32 .118 / 3.00 .105 / 2.67 .120 / 3.05 .306 / 7.77 .130 / 3.30 .318 / 8.08 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC O O C D E F G H I 1.8 A 32 V 37.5 W @ TC = 25 C -65 C to +250 C -65 C to +200 C 4.0 OC/W O O O J K L M N P R .572 / 14.53 .810 / 20.57 .320 / 8.13 .006 / 0.15 .072 / 1.83 .131 / 3.33 .230 / 5.84 ORDER CODE: ASI10511 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 15 mA IC = 15 mA TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω VBE = 28 V IC = 1.0 A POUT = 15 W f = 1.2 to 1.4 GHz MINIMUM TYPICAL MAXIMUM 48 48 3.5 1.5 30 8.5 48 300 UNITS V V V mA --dB % IE = 1.5 mA VCE = 28 V VCE = 5.0 V VCC = 28 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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