32–37 GHz GaAs MMIC Ring Hybrid Mixer
AM035N5-00 Features Chip Outline
2.800 2.471 2.027
I Low Conversion Loss, 6.0 dB ...
32–37 GHz GaAs MMIC Ring Hybrid Mixer
AM035N5-00 Features Chip Outline
2.800 2.471 2.027
I Low Conversion Loss, 6.0 dB I Low LO Power Requirement, 9 dBm I High LO to RF Isolation, 28 dB I No DC Bias Required
Description
Alpha’s ring hybrid GaAs
Schottky diode mixer has a typical conversion loss of 6.0 dB at an LO power level as low as 9 dBm over the band 32–37 GHz. The chip uses Alpha’s proven
Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for DC diode parameters and lot samples are RF measured to guarantee performance.
0.541
0.000 0.000 3.195
Dimensions indicated in mm. All pads are ≥ 0.07 mm wide. Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic Operating Temperature Storage Temperature Total Input Power (RF + LO) Value -55°C to +125°C -65°C to +150°C 20 dBm
Electrical Specifications at 25°C
Parameter RF and LO Frequency Range IF Frequency Range LO Power Level Conversion Loss1 RF and LO Return Loss1 LO to RF Isolation1 LO to IF Isolation1 RF Input 1 dB Compression Point1 Individual Diode Series Resistance
1. Not measured on a 100% basis. 2. Typical represents the median parameter value across the specified frequency range for the median chip.
Symbol FRF, FLO FIF PLO LC RLRF, RLLO ISOLO-RF ISO...